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       CDSV3-19-G/20-G/21-G Features -Fast switching diode. -Surface mount package ideally for automatic insertion. -For general purpose switching applications. -High conductance. Mechanical data -Case: SOT -323 -T erminals: Solder plated, solderable per MIL- STD-750, Method 2026. -Marking: CDSV3-19-G KA8 CDSV3-20-G KT2 CDSV3-21-G KT3 Page 1 QW-B0025 SMD Switching Diode High Speed RoHS Device Maximum Rating (at Ta=25°C unless otherwise noted) REV:A V mA mW 120 150 200 PD IF VR Junction and storage temperature Forward current Power dissipation Parameter Symbol Value Unit Reverse voltage TJ , TSTG -55 ~ +150 O C SOT-323 Dimensions in inches and (millimeters) 200 200 Electrical Characteristics (at Ta=25°C unless otherwise noted) V UA V 50 1 1.25 0.1 trr V(BR)R IR VF Diode capacitance Reverse recovery time Reverse leakage current Reverse breakdown voltage Parameter Symbol Min Max Unit Forward voltage CD 5 pF Test Conditions 100 150 200 nS CDSV3-19-G CDSV3-20-G CDSV3-21-G CDSV3-19-G CDSV3-20-G CDSV3-21-G IR=100uA VR=100V VR=150V VR=200V IF=100mA IF=200mA VR=0V, f=1MHZ IF=IR=30mA, Irr=0.1XIR CDSV3-19-G CDSV3-20-G CDSV3-21-G 0.087(2.20) 0.070(1.80) 0.054(1.35) 0.045(1.15) 0.056(1.40) 0.047(1.20) 1 2 3 0.006(0.15) 0.002(0.05) 0.087(2.20) 0.078(2.00) 0.004(0.10)min. 0.004(0.10)max. 0.044(1.10) 0.035(0.90) 0.016(0.40) 0.008(0.20) |